Search results for "Silicon crystal"

showing 3 items of 3 documents

Numerische Simulation der Phasengrenzen und Schmelzenströmung bei der Züchtung von Siliziumeinkristallen mit dem Floating-Zone Verfahren

1997

Silicon crystalsElektromagnetisches FeldSiliziumeinkristallen:NATURAL SCIENCES::Physics [Research Subject Categories]WārmeSilīcija kristāliPhasengrenzenKristallenSchmelzenstromungFāžu pārejas
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Steering of a Sub-GeV electron beam through planar channeling enhanced by rechanneling

2014

We report the observation of efficient steering of a 855 MeV electron beam at MAMI (MAinzer MIkrotron) facilities by means of planar channeling and volume reflection in a bent silicon crystal. A $30.5\text{ }\text{ }\ensuremath{\mu}\mathrm{m}$ thick plate of (211) oriented Si was bent to cause quasimosaic deformation of the (111) crystallographic planes, which were used for coherent interaction with the electron beam. The experimental results are analogous to those recorded some years ago at energy higher than 100 GeV, which is the only comparable study to date. Monte Carlo simulations demonstrated that rechanneling plays a considerable role in a particle's dynamics and hinders the spoiling…

electron beamEnergy rangesPlanar channelingBent molecular geometryGeneral Physics and AstronomyExtractionCrystallographic planeElectronX-ray sourcesCoherent interactionchanneling; electron beam; beam steerigbeam steerigMonocrystalline siliconPlanarNegative particlesA-particlesVolume reflectionCollimationPhysicsRange (particle radiation)Silicon crystalchannelingNegative particles; Bent crystals; Volume reflection; Deflection; Extraction; Collimation; A-particles; Coherent interaction; Crystallographic plane; Energy ranges; Planar channeling; Silicon crystal; X-ray sourcesReflection (mathematics)Cathode rayPhysics::Accelerator PhysicsAtomic physicsDeflectionBent crystalsEnergy (signal processing)
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Phonon-induced spin depolarization of conduction electrons in silicon crystals

2014

In last decade the process of spin relaxation of conduction electrons in semiconductor structures has been widely investigated, in order to use spin polarization as information carrier [1]. However, each initial non-equilibrium orientation decays over time during the transport. Thus, to make feasible the implementation of spin-based electronic devices, the features of spin relaxation at relatively high temperatures, jointly with the influence of transport conditions, should be fully understood [1]. Electrical injection of spin polarization in silicon structures up to room temperature has been experimentally carried out [2]. Despite these promising experimental results, a comprehensive theor…

Silicon crystalsSpintronicMonte Carlo simulationSettore FIS/03 - Fisica Della Materia
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